2009. 11. 17 1/4 semiconductor technical data 2N7000K n channel mosfet esd protected 2000v revision no : 1 interface and switching application. features esd protected 2000v. high density cell design for low r ds(on) . voltage controlled small signal switch. rugged and reliable. high saturation current capablity. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. source 2. gate 3. drain + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =60v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =20v, v ds =0v - - 10 a gate-body leakage, reverse i gssr v gs =-20v, v ds =0v - - -10 a g d s equivalent circuit characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current continuous i d 500 ma pulsed (note 1) i dp 2000 drain power dissipation p d 625 mw junction temperature t j 150 storage temperature range t stg -55 150 note 1) pulse width 10 , duty cycle 1%
2009. 11. 17 2/4 2N7000K revision no : 1 electrical characteristics (ta=25 ) on characteristics (note 2) characteristic symbol test condition min. typ. max. unit gate threshold voltage v th v ds =v gs , i d =250 a 1.1 - 2.35 v drain-source on resistance r ds(on) v gs =10v, i d =500ma - 1.2 1.8 v gs =5v, i d =50ma - 1.5 2.1 drain-source on voltage v ds(on) v gs =10v, i d =500ma - 0.6 0.9 v v gs =5v, i d =50ma - 0.075 0.105 on state drain current i d(on) v gs =10v, v ds = 2 v ds(on) 500 - - ma forward transconductance g fs v ds =10v, i d =500ma 200 580 - ms drain-source diode forward voltage v sd v gs =0v, i s =200ma (note1) - 760 1150 mv dynamic characteristics characteristic symbol test condition min. typ. max. unit input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 52.1 - pf reverse transfer capacitance c rss - 3.9 - output capacitance c oss - 7.7 - switching time turn-on time t on v dd =30v, r l =155 , i d =190ma, v gs =10v - 11.1 - ns turn-off time t off - 22.5 - g d v out v dd v in v gs s r l note 2 ) pulse test : pulse width 80 , duty cycle 1% output pulse width inverted t r t d(on) 10% 90% 90% 90% 10% 50% 50% t on t f t d(off) t off input v out v in switching time test circuit
2009. 11. 17 3/4 2N7000K revision no : 1 drain current i d (a) i d - v ds 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 6.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 drain-current i d (a) drain-source voltage v ds (v) r ds(on) - i d -100 0.0 0 50 100 -50 150 1.0 0.5 1.5 2.0 3.0 2.5 common source v ds =10v common source ta = 25 c common source ta = 25 c v gs = 3v 4v 5v 6v 7v 10v v gs = 3v 4v 5v 6v 7v 10v drain source on - resistance r ds ( ) 0.0 0.2 0.4 0.6 0.8 1.0 012345 drain-source voltage v gs (v) i d - v gs drain current i d (a) r ds(on) - t j drain source on - resistance r ds ( ) junction temperature t j ( ) c -55 c 125 c 25 c body diode forward voltage v sd (v) reverse drain current i (a) s i - v ssd 0.01 0.0 0.1 v =1v gs 1 0.3 0.6 0.9 1.2 1.5 4.0 3.5 -100 0.6 0 50 100 -50 150 0.8 0.7 0.9 1 1.2 1.1 v th - t j junction temperature t j ( ) c 1.4 1.3 common source v gs =v ds i d =250 a v gs =5v i d =50ma v gs =10v i d =500ma v =0v gs normalized gate source threshold voltage vth (v)
2009. 11. 17 4/4 2N7000K revision no : 1 1 10 100 1000 051015 20 25 drain-source voltage v (v) capacitance c (pf) c - v ds ds gate charge q (nc) gate-source voltage v (v) gs g v - q gs g 0 0 2 46810 4 2 6 8 10 c iss oss c c rss common source ta=25 c f=1mhz v =0v gs common source v ds =30v i d =0.3a ta=25 c p - ta d ambient temperature ta ( c) 02550 d 0 drain power dissipation p (mw) 75 100 125 150 175 100 500 300 200 600 400 700 soa ds drain-source voltage v (v) drain current i (a) d 0.001 0.01 10 100 1 0.1 10 0.0001 0.001 0.01 0.1 1 pw =100ms pw =1ms dc pw =10ms tj=150 , ta=25 ,single pulse c c pw 10
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